Справочник MOSFET. WMB010N04LG4

 

WMB010N04LG4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB010N04LG4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 1495 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.001 Ohm
   Тип корпуса: PDFN5060-8L
     - подбор MOSFET транзистора по параметрам

 

WMB010N04LG4 Datasheet (PDF)

 ..1. Size:616K  way-on
 wmb010n04lg4.pdf pdf_icon

WMB010N04LG4

WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB010N04LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:647K  way-on
 wmb017n03lg2.pdf pdf_icon

WMB010N04LG4

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:977K  way-on
 wmb014n04lg4.pdf pdf_icon

WMB010N04LG4

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:639K  way-on
 wmb014n06hg4.pdf pdf_icon

WMB010N04LG4

WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

ПОКАЗАТЬ ЕЩЁ

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History: IRF1404S | RU7550S | AUIRFZ34N | 2N6760JANTXV | FQI2N90TU | IRLML9301TRPBF | STP20NM60FP

 

 
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