All MOSFET. WMB020N06HG4 Datasheet

 

WMB020N06HG4 Datasheet and Replacement


   Type Designator: WMB020N06HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 174 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18.1 nS
   Cossⓘ - Output Capacitance: 1075 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PDFN5060-8L
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WMB020N06HG4 Datasheet (PDF)

 ..1. Size:648K  way-on
 wmb020n06hg4.pdf pdf_icon

WMB020N06HG4

WMB020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB020N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 6.1. Size:640K  way-on
 wmb020n03lg4.pdf pdf_icon

WMB020N06HG4

WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:640K  way-on
 wmb027n08hg4.pdf pdf_icon

WMB020N06HG4

WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB027N08HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.2. Size:713K  way-on
 wmb025n06lg4.pdf pdf_icon

WMB020N06HG4

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

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History: IRLML2502GPBF | SVGP20110NSTR | WMB025N06HG4 | MXP4004AT | WNMD2168 | RSH065N06 | MEE42942-G

Keywords - WMB020N06HG4 MOSFET datasheet

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