Справочник MOSFET. WMB020N06HG4

 

WMB020N06HG4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB020N06HG4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 113.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 174 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 18.1 ns
   Cossⓘ - Выходная емкость: 1075 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: PDFN5060-8L
     - подбор MOSFET транзистора по параметрам

 

WMB020N06HG4 Datasheet (PDF)

 ..1. Size:648K  way-on
 wmb020n06hg4.pdf pdf_icon

WMB020N06HG4

WMB020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB020N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 6.1. Size:640K  way-on
 wmb020n03lg4.pdf pdf_icon

WMB020N06HG4

WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:640K  way-on
 wmb027n08hg4.pdf pdf_icon

WMB020N06HG4

WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB027N08HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.2. Size:713K  way-on
 wmb025n06lg4.pdf pdf_icon

WMB020N06HG4

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RFT3055LE | IRF614A | SSP80R1K3S | FQB6N80TM | KNB3508A | SIHLR120 | IXFP18N65X2

 

 
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