WMB025N06HG4 MOSFET Datasheet: N-Ch, 60V, 140A. Full specification with pinout and replacement list

WMB025N06HG4 Specs and Replacement

Type Designator: WMB025N06HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.8 nS

Cossⓘ - Output Capacitance: 1053 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: PDFN5060-8L

WMB025N06HG4 substitution

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WMB025N06HG4 datasheet

..1. Size:648K way-on
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WMB025N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB025N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

5.1. Size:713K way-on
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WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB025N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

9.1. Size:640K way-on
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WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB027N08HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒

9.2. Size:637K way-on
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WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒