WMB025N06HG4 - описание и поиск аналогов

WMB025N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB025N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB025N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB027N08HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

WMB020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB020N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

WMB02DN10T1 100V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 WMB02DN10T1 uses advanced power trench technology that has D2 D1 D2 been especially tailored to minimize the on-state resistance and yet S1 G1 G2 maintain superior switching performance. S2 S2 G1 G2 S1 Features PDFN5060-8L V = 100V, I = 3.5A DS D R