WMB02DN10T1 Datasheet and Replacement
Type Designator: WMB02DN10T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 14 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: PDFN5060-8L
WMB02DN10T1 substitution
WMB02DN10T1 Datasheet (PDF)
wmb02dn10t1.pdf

WMB02DN10T1 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1WMB02DN10T1 uses advanced power trench technology that has D2D1D2been especially tailored to minimize the on-state resistance and yet S1G1G2maintain superior switching performance. S2S2G1G2S1Features PDFN5060-8L V = 100V, I = 3.5A DS DR
wmb027n08hg4.pdf

WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB027N08HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb025n06lg4.pdf

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
wmb023n03lg2.pdf

WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
Datasheet: WMB017N03LG2 , WMB018N04LG2 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , STP75NF75 , WMB032N04LG2 , WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 .
History: 2SK566 | SMG2334N | STB57N65M5
Keywords - WMB02DN10T1 MOSFET datasheet
WMB02DN10T1 cross reference
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History: 2SK566 | SMG2334N | STB57N65M5



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