All MOSFET. WMB02DN10T1 Datasheet

 

WMB02DN10T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB02DN10T1
   Marking Code: B02DN10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.3 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: PDFN5060-8L

 WMB02DN10T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB02DN10T1 Datasheet (PDF)

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