WMB02DN10T1 MOSFET Datasheet: N-Ch, 100V, 3.5A. Full specification with pinout and replacement list

WMB02DN10T1 Specs and Replacement

Type Designator: WMB02DN10T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: PDFN5060-8L

WMB02DN10T1 substitution

- MOSFET ⓘ Cross-Reference Search

WMB02DN10T1 datasheet

..1. Size:598K way-on
wmb02dn10t1.pdf pdf_icon

WMB02DN10T1 100V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 WMB02DN10T1 uses advanced power trench technology that has D2 D1 D2 been especially tailored to minimize the on-state resistance and yet S1 G1 G2 maintain superior switching performance. S2 S2 G1 G2 S1 Features PDFN5060-8L V = 100V, I = 3.5A DS D R ... See More ⇒

9.1. Size:640K way-on
wmb027n08hg4.pdf pdf_icon

WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB027N08HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒

9.2. Size:713K way-on
wmb025n06lg4.pdf pdf_icon

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB025N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

9.3. Size:637K way-on
wmb023n03lg2.pdf pdf_icon

WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒