Справочник MOSFET. WMB02DN10T1

 

WMB02DN10T1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB02DN10T1
   Маркировка: B02DN10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 6.94 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 5.3 nC
   tr ⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 14 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
   Тип корпуса: PDFN5060-8L
 

 Аналог (замена) для WMB02DN10T1

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB02DN10T1 Datasheet (PDF)

 ..1. Size:598K  way-on
 wmb02dn10t1.pdf pdf_icon

WMB02DN10T1

WMB02DN10T1 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1WMB02DN10T1 uses advanced power trench technology that has D2D1D2been especially tailored to minimize the on-state resistance and yet S1G1G2maintain superior switching performance. S2S2G1G2S1Features PDFN5060-8L V = 100V, I = 3.5A DS DR

 9.1. Size:640K  way-on
 wmb027n08hg4.pdf pdf_icon

WMB02DN10T1

WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB027N08HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.2. Size:713K  way-on
 wmb025n06lg4.pdf pdf_icon

WMB02DN10T1

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.3. Size:637K  way-on
 wmb023n03lg2.pdf pdf_icon

WMB02DN10T1

WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMB017N03LG2 , WMB018N04LG2 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , STP75NF75 , WMB032N04LG2 , WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 .

 

 
Back to Top

 


 
.