WMB034N06HG4 Datasheet and Replacement
Type Designator: WMB034N06HG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 89.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 125 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 1090 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: PDFN5060-8L
WMB034N06HG4 substitution
WMB034N06HG4 Datasheet (PDF)
wmb034n06hg4.pdf

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
wmb034n06lg4.pdf

WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
wmb037n10hgs.pdf

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB037N10HGS uses Wayon's advanced power trench MOSFET Gsstechnology that has been especially tailored to minimize the on-state sssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8
wmb03dn06t1.pdf

WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD1D2D1D2D1 D2D1 D2WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1G1G2yet maintain superior switching performance. S2 S2G1G2S1Features PDFN5060-8L V = 60V, I = 6A DS DR
Datasheet: WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 , WMB032N04LG2 , 7N65 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS .
History: SVT035R5NMJ | 2SK1916-01R
Keywords - WMB034N06HG4 MOSFET datasheet
WMB034N06HG4 cross reference
WMB034N06HG4 equivalent finder
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WMB034N06HG4 replacement
History: SVT035R5NMJ | 2SK1916-01R



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