Справочник MOSFET. WMB034N06HG4

 

WMB034N06HG4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB034N06HG4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 89.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 125 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 1090 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
   Тип корпуса: PDFN5060-8L
 

 Аналог (замена) для WMB034N06HG4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB034N06HG4 Datasheet (PDF)

 ..1. Size:649K  way-on
 wmb034n06hg4.pdf pdf_icon

WMB034N06HG4

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 5.1. Size:988K  way-on
 wmb034n06lg4.pdf pdf_icon

WMB034N06HG4

WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.1. Size:637K  way-on
 wmb037n10hgs.pdf pdf_icon

WMB034N06HG4

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB037N10HGS uses Wayon's advanced power trench MOSFET Gsstechnology that has been especially tailored to minimize the on-state sssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

 9.2. Size:597K  way-on
 wmb03dn06t1.pdf pdf_icon

WMB034N06HG4

WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD1D2D1D2D1 D2D1 D2WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1G1G2yet maintain superior switching performance. S2 S2G1G2S1Features PDFN5060-8L V = 60V, I = 6A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 , WMB032N04LG2 , 7N65 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS .

History: APT10040B2VFRG | PJM2302NSA-S

 

 
Back to Top

 


 
.