WMB034N06HG4 - описание и поиск аналогов

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB037N10HGS uses Wayon's advanced power trench MOSFET G ss technology that has been especially tailored to minimize the on-state s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET Description D1 D2 D1 D2 D1 D2 D1 D2 WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1 G1 G2 yet maintain superior switching performance. S2 S2 G1 G2 S1 Features PDFN5060-8L V = 60V, I = 6A DS D R

WMB032N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB032N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss resistance and yet maintain superior switching performance. This device G s is well suited for high efficiency fast switching applications. PDFN506