STM102D
MOSFET. Datasheet pdf. Equivalent
Type Designator: STM102D
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 2
A
Qgⓘ - Total Gate Charge: 3.2
nC
Cossⓘ -
Output Capacitance: 36
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.216
Ohm
Package:
SOP8
STM102D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STM102D
Datasheet (PDF)
..1. Size:134K samhop
stm102d.pdf
GPPSTM102DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID216 @ VGS=10V 547 @ VGS=-10V100V 2.0A-100V -1.3A328 @ VGS=4.5V 614 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C unl
9.1. Size:123K samhop
stm105n.pdf
GreenProduct STM105NaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.100V 6A 31 @ VGS=10VSuface Mount Package.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter UnitsLimitVDS Drai
9.2. Size:179K samhop
stm101n.pdf
GreenProduct STM101NaS mHop Microelectronics C orp.Ver1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.170 @ VGS=10VSuface Mount Package.100V 3A260 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter
Datasheet: IRFP360LC
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