WMB040N03LG2 MOSFET Datasheet: N-Ch, 30V, 58A. Full specification with pinout and replacement list

WMB040N03LG2 Specs and Replacement

Type Designator: WMB040N03LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.5 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: PDFN5060-8L

WMB040N03LG2 substitution

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WMB040N03LG2 datasheet

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wmb040n03lg2.pdf pdf_icon

WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

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WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB040N08HGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L Fe... See More ⇒

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WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB049N12HG2 uses Wayon's 2nd generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss on-state resistance and yet maintain superior switching performance. s ss G s This device is well suited for high efficiency fast switching applications. PDFN... See More ⇒

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WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET Description WMB042DN03LG2 uses Wayon's2nd generation power trench G2 S2 S2 S2 S2 S2 MOSFET technology that has been especially tailored to S2 G2 minimize the on-state resistance and yet maintain superior G1 D1 switching performance. This device is well suited for high D1 D1 D1 D1 efficiency fast switching a... See More ⇒