Справочник MOSFET. WMB040N03LG2

 

WMB040N03LG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB040N03LG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20.5 ns
   Cossⓘ - Выходная емкость: 680 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: PDFN5060-8L
 

 Аналог (замена) для WMB040N03LG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB040N03LG2 Datasheet (PDF)

 ..1. Size:638K  way-on
 wmb040n03lg2.pdf pdf_icon

WMB040N03LG2

WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 6.1. Size:622K  way-on
 wmb040n08hgs.pdf pdf_icon

WMB040N03LG2

WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N08HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LFe

 9.1. Size:976K  way-on
 wmb049n12hg2.pdf pdf_icon

WMB040N03LG2

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

 9.2. Size:1057K  way-on
 wmb042dn03lg2.pdf pdf_icon

WMB040N03LG2

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 , WMB032N04LG2 , WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , 12N60 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 .

 

 
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