WMB050N03LG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMB050N03LG4
Marking Code: 050N03L4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 475 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: PDFN5060-8L
WMB050N03LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMB050N03LG4 Datasheet (PDF)
wmb050n03lg4.pdf
WMB050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB050N03LG4 uses Wayon's 4th generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gssssson-state resistance and yet maintain superior switching performance. GsThis device is well suited for high efficiency fast switching applications. PDFN506
wmb053nv8hgs.pdf
WMB053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB053NV8HGS uses Wayon's advanced power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications.PDFN5060-8LF
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