WMB050N03LG4 PDF and Equivalents Search

 

WMB050N03LG4 Specs and Replacement

Type Designator: WMB050N03LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 475 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: PDFN5060-8L

WMB050N03LG4 substitution

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WMB050N03LG4 datasheet

 ..1. Size:639K  way-on
 wmb050n03lg4.pdf pdf_icon

WMB050N03LG4

WMB050N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB050N03LG4 uses Wayon's 4th generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss s ss on-state resistance and yet maintain superior switching performance. G s This device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒

 9.1. Size:984K  way-on
 wmb053nv8hgs.pdf pdf_icon

WMB050N03LG4

WMB053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB053NV8HGS uses Wayon's advanced power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss resistance and yet maintain superior switching performance. This device G s is well suited for high efficiency fast switching applications. PDFN5060-8L F... See More ⇒

Detailed specifications: WMB040N03LG2, WMB040N08HGS, WMB042DN03LG2, WMB043N10HGS, WMB043N10LGS, WMB048NV6HG4, WMB048NV6LG4, WMB049N12HG2, 4435, WMB053NV8HGS, WMB060N08HG2, WMB060N08LG2, WMB060N10HGS, WMB060N10LGS, WMB072N12HG2, WMB072N12LG2-S, WMB080N03LG2

Keywords - WMB050N03LG4 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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