All MOSFET. WMB050N03LG4 Datasheet

 

WMB050N03LG4 Datasheet and Replacement


   Type Designator: WMB050N03LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: PDFN5060-8L
 

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WMB050N03LG4 Datasheet (PDF)

 ..1. Size:639K  way-on
 wmb050n03lg4.pdf pdf_icon

WMB050N03LG4

WMB050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB050N03LG4 uses Wayon's 4th generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gssssson-state resistance and yet maintain superior switching performance. GsThis device is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:984K  way-on
 wmb053nv8hgs.pdf pdf_icon

WMB050N03LG4

WMB053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB053NV8HGS uses Wayon's advanced power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications.PDFN5060-8LF

Datasheet: WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , AON7410 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 .

History: HFP630 | HFP640

Keywords - WMB050N03LG4 MOSFET datasheet

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