All MOSFET. WMB060N08LG2 Datasheet

 

WMB060N08LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB060N08LG2
   Marking Code: B060N08L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 98 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.5 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 482 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN5060-8L

 WMB060N08LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB060N08LG2 Datasheet (PDF)

 ..1. Size:532K  way-on
 wmb060n08lg2.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506

 5.1. Size:705K  way-on
 wmb060n08hg2.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-

 7.1. Size:985K  way-on
 wmb060n10lgs.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

 7.2. Size:414K  way-on
 wmb060n10hgs.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RJK5014DPP-E0

 

 
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