WMB060N08LG2 MOSFET Datasheet: N-Ch, 80V, 98A. Full specification with pinout and replacement list

WMB060N08LG2 Specs and Replacement

Type Designator: WMB060N08LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 98 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 482 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN5060-8L

WMB060N08LG2 substitution

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WMB060N08LG2 datasheet

..1. Size:532K way-on
wmb060n08lg2.pdf pdf_icon

WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒

5.1. Size:705K way-on
wmb060n08hg2.pdf pdf_icon

WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-... See More ⇒

7.1. Size:985K way-on
wmb060n10lgs.pdf pdf_icon

WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB060N10LGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L ... See More ⇒

7.2. Size:414K way-on
wmb060n10hgs.pdf pdf_icon

WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB060N10HGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L ... See More ⇒

Detailed specifications: WMB043N10HGS, WMB043N10LGS, WMB048NV6HG4, WMB048NV6LG4, WMB049N12HG2, WMB050N03LG4, WMB053NV8HGS, WMB060N08HG2, K4145, WMB060N10HGS, WMB060N10LGS, WMB072N12HG2, WMB072N12LG2-S, WMB080N03LG2, WMB080N10LG2, WMB090DN04LG2, WMB090DNV6LG4