All MOSFET. WMB060N08LG2 Datasheet

 

WMB060N08LG2 Datasheet and Replacement


   Type Designator: WMB060N08LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 98 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 482 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN5060-8L
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WMB060N08LG2 Datasheet (PDF)

 ..1. Size:532K  way-on
 wmb060n08lg2.pdf pdf_icon

WMB060N08LG2

WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506

 5.1. Size:705K  way-on
 wmb060n08hg2.pdf pdf_icon

WMB060N08LG2

WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-

 7.1. Size:985K  way-on
 wmb060n10lgs.pdf pdf_icon

WMB060N08LG2

WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

 7.2. Size:414K  way-on
 wmb060n10hgs.pdf pdf_icon

WMB060N08LG2

WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK3930-01S | SMG2314NE | HUFA75639S3ST | IXTB30N100L | WSD3042DN56 | FS3KM-10 | FQPF3N80C

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