Справочник MOSFET. WMB060N08LG2

 

WMB060N08LG2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMB060N08LG2
   Маркировка: B060N08L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 98 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 21.5 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 482 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: PDFN5060-8L

 Аналог (замена) для WMB060N08LG2

 

 

WMB060N08LG2 Datasheet (PDF)

 ..1. Size:532K  way-on
 wmb060n08lg2.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506

 5.1. Size:705K  way-on
 wmb060n08hg2.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-

 7.1. Size:985K  way-on
 wmb060n10lgs.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

 7.2. Size:414K  way-on
 wmb060n10hgs.pdf

WMB060N08LG2 WMB060N08LG2

WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

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