WMB072N12LG2-S Datasheet and Replacement
Type Designator: WMB072N12LG2-S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 118 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 810 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PDFN5060-8L
WMB072N12LG2-S substitution
WMB072N12LG2-S Datasheet (PDF)
wmb072n12lg2-s.pdf

WMB072N12LG2-S 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB072N12LG2-S uses Wayon's 2nd generation power trench D DMOSFET technology that has been especially tailored to minimize the GsssssGon-state resistance and yet maintain superior switching performance. sThis device is well suited for high efficiency fast switching applications. PDFN
wmb072n12hg2.pdf

WMB072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB072N12HG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssresistance and yet maintain superior switching performance. This ssGsdevice is well suited for high efficiency fast switching applications. PDFN5060
Datasheet: WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , IRF4905 , WMB080N03LG2 , WMB080N10LG2 , WMB090DN04LG2 , WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 .
History: SVSP20N60P7D2 | 2SK1717 | WMB240P10HG4 | SRC60R145BS | MTB06N03E3 | WSP4953A | 2SJ413
Keywords - WMB072N12LG2-S MOSFET datasheet
WMB072N12LG2-S cross reference
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WMB072N12LG2-S lookup
WMB072N12LG2-S substitution
WMB072N12LG2-S replacement
History: SVSP20N60P7D2 | 2SK1717 | WMB240P10HG4 | SRC60R145BS | MTB06N03E3 | WSP4953A | 2SJ413



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