WMB072N12LG2-S MOSFET Datasheet: N-Ch, 120V, 90A. Full specification with pinout and replacement list

WMB072N12LG2-S Specs and Replacement

Type Designator: WMB072N12LG2-S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 118 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: PDFN5060-8L

WMB072N12LG2-S substitution

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WMB072N12LG2-S datasheet

..1. Size:625K way-on
wmb072n12lg2-s.pdf pdf_icon

WMB072N12LG2-S 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB072N12LG2-S uses Wayon's 2nd generation power trench D D MOSFET technology that has been especially tailored to minimize the G ss s ss G on-state resistance and yet maintain superior switching performance. s This device is well suited for high efficiency fast switching applications. PDFN... See More ⇒

5.1. Size:544K way-on
wmb072n12hg2.pdf pdf_icon

WMB072N12HG2 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D WMB072N12HG2 uses Wayon's 2nd generation power trench MOSFET D D D technology that has been especially tailored to minimize the on-state G ss s resistance and yet maintain superior switching performance. This ss G s device is well suited for high efficiency fast switching applications. PDFN5060... See More ⇒

Detailed specifications: WMB049N12HG2, WMB050N03LG4, WMB053NV8HGS, WMB060N08HG2, WMB060N08LG2, WMB060N10HGS, WMB060N10LGS, WMB072N12HG2, 5N65, WMB080N03LG2, WMB080N10LG2, WMB090DN04LG2, WMB090DNV6LG4, WMB090N04LG2, WMB090NV6LG4, WMB093N15HG4, WMB098N03LG2