All MOSFET. WMB072N12LG2-S Datasheet

 

WMB072N12LG2-S MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB072N12LG2-S
   Marking Code: B072N12L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 52.5 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFN5060-8L

 WMB072N12LG2-S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB072N12LG2-S Datasheet (PDF)

 ..1. Size:625K  way-on
 wmb072n12lg2-s.pdf

WMB072N12LG2-S WMB072N12LG2-S

WMB072N12LG2-S 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB072N12LG2-S uses Wayon's 2nd generation power trench D DMOSFET technology that has been especially tailored to minimize the GsssssGon-state resistance and yet maintain superior switching performance. sThis device is well suited for high efficiency fast switching applications. PDFN

 5.1. Size:544K  way-on
 wmb072n12hg2.pdf

WMB072N12LG2-S WMB072N12LG2-S

WMB072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB072N12HG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssresistance and yet maintain superior switching performance. This ssGsdevice is well suited for high efficiency fast switching applications. PDFN5060

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFK26N90

 

 
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