All MOSFET. WMB072N12LG2-S Datasheet

 

WMB072N12LG2-S Datasheet and Replacement


   Type Designator: WMB072N12LG2-S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFN5060-8L
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WMB072N12LG2-S Datasheet (PDF)

 ..1. Size:625K  way-on
 wmb072n12lg2-s.pdf pdf_icon

WMB072N12LG2-S

WMB072N12LG2-S 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB072N12LG2-S uses Wayon's 2nd generation power trench D DMOSFET technology that has been especially tailored to minimize the GsssssGon-state resistance and yet maintain superior switching performance. sThis device is well suited for high efficiency fast switching applications. PDFN

 5.1. Size:544K  way-on
 wmb072n12hg2.pdf pdf_icon

WMB072N12LG2-S

WMB072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB072N12HG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssresistance and yet maintain superior switching performance. This ssGsdevice is well suited for high efficiency fast switching applications. PDFN5060

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE65N230K | CSD16323Q3 | KHB1D0N70G | 2N80L-TF2-T | WPMD2012 | 10N70L-TF1-T | 2N65KL-TND-R

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