WMB080N03LG2 Datasheet and Replacement
Type Designator: WMB080N03LG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 335 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PDFN5060-8L
WMB080N03LG2 substitution
WMB080N03LG2 Datasheet (PDF)
wmb080n03lg2.pdf
WMB080N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5
wmb080n10lg2.pdf
WMB080N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN
Datasheet: WMB050N03LG4 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , IRF1010E , WMB080N10LG2 , WMB090DN04LG2 , WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS .
History: IRL510PBF | DMN2990UDJ | 2SK2896-01S | HMS3205D | AP5521GH-HF | AON1620 | FK16UM-5
Keywords - WMB080N03LG2 MOSFET datasheet
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WMB080N03LG2 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRL510PBF | DMN2990UDJ | 2SK2896-01S | HMS3205D | AP5521GH-HF | AON1620 | FK16UM-5
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