All MOSFET. WMB090DN04LG2 Datasheet

 

WMB090DN04LG2 Datasheet and Replacement


   Type Designator: WMB090DN04LG2
   Marking Code: 090DN04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.6 nC
   tr ⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PDFN5060-8L
 

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WMB090DN04LG2 Datasheet (PDF)

 ..1. Size:621K  way-on
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WMB090DN04LG2

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB090DN04LG2 uses Wayon's 2nd generation power trench S1MOSFET technology that has been especially tailored to minimize the G1G2S2S2G1G2on-state resistance and yet maintain superior switching performance. S1This device is well suited for high efficiency fast swit

 6.1. Size:985K  way-on
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WMB090DN04LG2

WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB090DNV6LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchin

 8.1. Size:645K  way-on
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WMB090DN04LG2

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 8.2. Size:476K  way-on
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WMB090DN04LG2

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

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Datasheet: WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 , IRLZ44N , WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS .

History: 2SK1662 | AM1430N

Keywords - WMB090DN04LG2 MOSFET datasheet

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