WMB090DN04LG2 - аналоги, параметры транзистора

WMB090DN04LG2 даташит

..1. Size:621K way-on
wmb090dn04lg2.pdf pdf_icon

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 D1 D2 WMB090DN04LG2 uses Wayon's 2nd generation power trench S1 MOSFET technology that has been especially tailored to minimize the G1 G2 S2 S2 G1 G2 on-state resistance and yet maintain superior switching performance. S1 This device is well suited for high efficiency fast swit

6.1. Size:985K way-on
wmb090dnv6lg4.pdf pdf_icon

WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 WMB090DNV6LG4 uses Wayon's 4th generation power trench D1 D2 D1 D2 MOSFET technology that has been especially tailored to minimize the S1 G1 G2 on-state resistance and yet maintain superior switching performance. S2 S2 G1 G2 S1 This device is well suited for high efficiency fast switchin

8.1. Size:645K way-on
wmb090nv6lg4.pdf pdf_icon

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

8.2. Size:476K way-on
wmb090n04lg2.pdf pdf_icon

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

Другие MOSFET... WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 , AON6380 , WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS .