STM101N Datasheet and Replacement
Type Designator: STM101N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: SOP8
STM101N substitution
STM101N Datasheet (PDF)
stm101n.pdf

GreenProduct STM101NaS mHop Microelectronics C orp.Ver1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.170 @ VGS=10VSuface Mount Package.100V 3A260 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter
stm105n.pdf

GreenProduct STM105NaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.100V 6A 31 @ VGS=10VSuface Mount Package.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter UnitsLimitVDS Drai
stm102d.pdf

GPPSTM102DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID216 @ VGS=10V 547 @ VGS=-10V100V 2.0A-100V -1.3A328 @ VGS=4.5V 614 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C unl
Datasheet: FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 , FDP8447L , FDP8860 , STM102D , FDP8870 , SKD502T , FDP8870F085 , STK900 , FDP8874 , STK801 , FDP8876 , STK600 , FDP8880 , STK400 .
History: HFS2N60FS
Keywords - STM101N MOSFET datasheet
STM101N cross reference
STM101N equivalent finder
STM101N lookup
STM101N substitution
STM101N replacement
History: HFS2N60FS



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