WMB090DNV6LG4 MOSFET Datasheet: N-Ch, 65V, 40A. Full specification with pinout and replacement list

WMB090DNV6LG4 Specs and Replacement

Type Designator: WMB090DNV6LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.7 nS

Cossⓘ - Output Capacitance: 377 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: PDFN5060-8L

WMB090DNV6LG4 substitution

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WMB090DNV6LG4 datasheet

..1. Size:985K way-on
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WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 WMB090DNV6LG4 uses Wayon's 4th generation power trench D1 D2 D1 D2 MOSFET technology that has been especially tailored to minimize the S1 G1 G2 on-state resistance and yet maintain superior switching performance. S2 S2 G1 G2 S1 This device is well suited for high efficiency fast switchin... See More ⇒

6.1. Size:621K way-on
wmb090dn04lg2.pdf pdf_icon

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 D1 D2 WMB090DN04LG2 uses Wayon's 2nd generation power trench S1 MOSFET technology that has been especially tailored to minimize the G1 G2 S2 S2 G1 G2 on-state resistance and yet maintain superior switching performance. S1 This device is well suited for high efficiency fast swit... See More ⇒

8.1. Size:645K way-on
wmb090nv6lg4.pdf pdf_icon

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒

8.2. Size:476K way-on
wmb090n04lg2.pdf pdf_icon

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒

Detailed specifications: WMB060N08LG2, WMB060N10HGS, WMB060N10LGS, WMB072N12HG2, WMB072N12LG2-S, WMB080N03LG2, WMB080N10LG2, WMB090DN04LG2, IRF530, WMB090N04LG2, WMB090NV6LG4, WMB093N15HG4, WMB098N03LG2, WMB099N10HGS, WMB099N10LG2, WMB099N10LGS, WMB100N07TS