WMB090DNV6LG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMB090DNV6LG4
Marking Code: 090DNV6L4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.1 nC
trⓘ - Rise Time: 2.7 nS
Cossⓘ - Output Capacitance: 377 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: PDFN5060-8L
WMB090DNV6LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMB090DNV6LG4 Datasheet (PDF)
wmb090dnv6lg4.pdf
WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB090DNV6LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchin
wmb090dn04lg2.pdf
WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB090DN04LG2 uses Wayon's 2nd generation power trench S1MOSFET technology that has been especially tailored to minimize the G1G2S2S2G1G2on-state resistance and yet maintain superior switching performance. S1This device is well suited for high efficiency fast swit
wmb090nv6lg4.pdf
WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb090n04lg2.pdf
WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
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