WMB090DNV6LG4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMB090DNV6LG4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 27.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 2.7 ns
Cossⓘ - Выходная емкость: 377 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
Тип корпуса: PDFN5060-8L
Аналог (замена) для WMB090DNV6LG4
WMB090DNV6LG4 Datasheet (PDF)
wmb090dnv6lg4.pdf

WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB090DNV6LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchin
wmb090dn04lg2.pdf

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB090DN04LG2 uses Wayon's 2nd generation power trench S1MOSFET technology that has been especially tailored to minimize the G1G2S2S2G1G2on-state resistance and yet maintain superior switching performance. S1This device is well suited for high efficiency fast swit
wmb090nv6lg4.pdf

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb090n04lg2.pdf

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
Другие MOSFET... WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 , WMB090DN04LG2 , AO4407 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS .



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