All MOSFET. WMB099N10HGS Datasheet

 

WMB099N10HGS Datasheet and Replacement


   Type Designator: WMB099N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28.5 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: PDFN5060-8L
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WMB099N10HGS Datasheet (PDF)

 ..1. Size:546K  way-on
 wmb099n10hgs.pdf pdf_icon

WMB099N10HGS

WMB099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10HGS uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN5060

 5.1. Size:601K  way-on
 wmb099n10lgs.pdf pdf_icon

WMB099N10HGS

WMB099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LF

 5.2. Size:979K  way-on
 wmb099n10lg2.pdf pdf_icon

WMB099N10HGS

WMB099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB099N10LG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This Gsdevice is well suited for high efficiency fast switching applicationsPDFN5060

 9.1. Size:619K  way-on
 wmb093n15hg4.pdf pdf_icon

WMB099N10HGS

WMB093N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB093N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FRM9230R | AFN2306A | NVTFS5826NL | BSZ035N03MSG | IXFH110N10P | RSE002P03TL | FTK9926

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