WMB099N10HGS MOSFET. Datasheet pdf. Equivalent

   Type Designator: WMB099N10HGS
   Marking Code: 099N10HS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 59 nC
   trⓘ - Rise Time: 28.5 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: PDFN5060-8L

WMB099N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

WMB099N10HGS Datasheet (PDF)

..1. Size:546K way-on
wmb099n10hgs.pdf

WMB099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10HGS uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN5060

5.1. Size:601K way-on
wmb099n10lgs.pdf

WMB099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LF

5.2. Size:979K way-on
wmb099n10lg2.pdf

WMB099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB099N10LG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This Gsdevice is well suited for high efficiency fast switching applicationsPDFN5060

9.1. Size:619K way-on
wmb093n15hg4.pdf

WMB093N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB093N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060

9.2. Size:645K way-on
wmb090nv6lg4.pdf

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

9.3. Size:627K way-on
wmb098n03lg2.pdf

WMB098N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB098N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506

9.4. Size:476K way-on
wmb090n04lg2.pdf

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

9.5. Size:621K way-on
wmb090dn04lg2.pdf

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB090DN04LG2 uses Wayon's 2nd generation power trench S1MOSFET technology that has been especially tailored to minimize the G1G2S2S2G1G2on-state resistance and yet maintain superior switching performance. S1This device is well suited for high efficiency fast swit

9.6. Size:985K way-on
wmb090dnv6lg4.pdf

WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB090DNV6LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchin

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

LIST

Last Update

All MOSFET. WMB099N10HGS Datasheet

WMB099N10HGS MOSFET. Datasheet pdf. Equivalent

WMB099N10HGS Datasheet (PDF)

LIST

Last Update

AllTransistors(C)2015