WMB099N10HGS - аналоги и даташиты транзистора

 

WMB099N10HGS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMB099N10HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 96.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 28.5 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0099 Ohm
   Тип корпуса: PDFN5060-8L
 

 Аналог (замена) для WMB099N10HGS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB099N10HGS Datasheet (PDF)

 ..1. Size:546K  way-on
 wmb099n10hgs.pdf pdf_icon

WMB099N10HGS

WMB099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10HGS uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN5060

 5.1. Size:601K  way-on
 wmb099n10lgs.pdf pdf_icon

WMB099N10HGS

WMB099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LF

 5.2. Size:979K  way-on
 wmb099n10lg2.pdf pdf_icon

WMB099N10HGS

WMB099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB099N10LG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This Gsdevice is well suited for high efficiency fast switching applicationsPDFN5060

 9.1. Size:619K  way-on
 wmb093n15hg4.pdf pdf_icon

WMB099N10HGS

WMB093N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB093N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMB080N03LG2 , WMB080N10LG2 , WMB090DN04LG2 , WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , IRF1407 , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , WMB119N10LG2 .

History: AP9562GP-HF | 2SK161 | AP94T07GMT-HF | AON3806 | NCEP040N85 | ZXMS6006SGQ | KMB6D0DN35QA

 

 
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