Справочник MOSFET. WMB099N10HGS

 

WMB099N10HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMB099N10HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 68 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 28.5 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0099 Ohm
   Тип корпуса: PDFN5060-8L

 Аналог (замена) для WMB099N10HGS

 

 

WMB099N10HGS Datasheet (PDF)

 ..1. Size:546K  way-on
 wmb099n10hgs.pdf

WMB099N10HGS WMB099N10HGS

WMB099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10HGS uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN5060

 5.1. Size:601K  way-on
 wmb099n10lgs.pdf

WMB099N10HGS WMB099N10HGS

WMB099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LF

 5.2. Size:979K  way-on
 wmb099n10lg2.pdf

WMB099N10HGS WMB099N10HGS

WMB099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB099N10LG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This Gsdevice is well suited for high efficiency fast switching applicationsPDFN5060

 9.1. Size:619K  way-on
 wmb093n15hg4.pdf

WMB099N10HGS WMB099N10HGS

WMB093N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB093N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060

 9.2. Size:645K  way-on
 wmb090nv6lg4.pdf

WMB099N10HGS WMB099N10HGS

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:627K  way-on
 wmb098n03lg2.pdf

WMB099N10HGS WMB099N10HGS

WMB098N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB098N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506

 9.4. Size:476K  way-on
 wmb090n04lg2.pdf

WMB099N10HGS WMB099N10HGS

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.5. Size:621K  way-on
 wmb090dn04lg2.pdf

WMB099N10HGS WMB099N10HGS

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB090DN04LG2 uses Wayon's 2nd generation power trench S1MOSFET technology that has been especially tailored to minimize the G1G2S2S2G1G2on-state resistance and yet maintain superior switching performance. S1This device is well suited for high efficiency fast swit

 9.6. Size:985K  way-on
 wmb090dnv6lg4.pdf

WMB099N10HGS WMB099N10HGS

WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB090DNV6LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchin

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History: JCS630BA | JCS6N90CA | 2SK3092I | 2SK304

 

 
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