All MOSFET. WMB100N07TS Datasheet

 

WMB100N07TS Datasheet and Replacement


   Type Designator: WMB100N07TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 271 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm
   Package: PDFN5060-8L
 

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WMB100N07TS Datasheet (PDF)

 ..1. Size:536K  way-on
 wmb100n07ts.pdf pdf_icon

WMB100N07TS

WMB100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB100N07TS uses advanced power trench technology that has DD Dbeen especially tailored to minimize the on-state resistance and yet Gsssmaintain superior switching performance. ssGsFeatures PDFN5060-8L V = 70V, I = 100A DS DR

 8.1. Size:1091K  way-on
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WMB100N07TS

WMB100P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB100P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -100A DS DR

 9.1. Size:984K  way-on
 wmb108n03t1.pdf pdf_icon

WMB100N07TS

WMB108N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB108N03T1 uses advanced power trench technology that has D DDDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 30 V, I = 108A DS DR

Datasheet: WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , 18N50 , WMB100P03TS , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS .

History: KP775B | ME95N10F

Keywords - WMB100N07TS MOSFET datasheet

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