All MOSFET. WMB115N15HG4 Datasheet

 

WMB115N15HG4 Datasheet and Replacement


   Type Designator: WMB115N15HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 268 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: PDFN5060-8L
 

 WMB115N15HG4 substitution

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WMB115N15HG4 Datasheet (PDF)

 ..1. Size:443K  way-on
 wmb115n15hg4.pdf pdf_icon

WMB115N15HG4

WMB115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:975K  way-on
 wmb115n15lg4.pdf pdf_icon

WMB115N15HG4

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.1. Size:640K  way-on
 wmb119n12lg4.pdf pdf_icon

WMB115N15HG4

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:519K  way-on
 wmb119n10lg2.pdf pdf_icon

WMB115N15HG4

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50

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Datasheet: WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 , IRF1407 , WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS .

History: BLF7G24L-140 | BLF7G22LS-160 | BLF7G22LS-130 | BLF7G22LS-250P

Keywords - WMB115N15HG4 MOSFET datasheet

 WMB115N15HG4 cross reference
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 WMB115N15HG4 replacement

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