WMB115N15HG4 - описание и поиск аналогов

 

WMB115N15HG4. Аналоги и основные параметры

Наименование производителя: WMB115N15HG4

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 268 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm

Тип корпуса: PDFN5060-8L

Аналог (замена) для WMB115N15HG4

- подборⓘ MOSFET транзистора по параметрам

 

WMB115N15HG4 даташит

 ..1. Size:443K  way-on
 wmb115n15hg4.pdf pdf_icon

WMB115N15HG4

WMB115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB115N15HG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:975K  way-on
 wmb115n15lg4.pdf pdf_icon

WMB115N15HG4

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB115N15LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.1. Size:640K  way-on
 wmb119n12lg4.pdf pdf_icon

WMB115N15HG4

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB119N12LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:519K  way-on
 wmb119n10lg2.pdf pdf_icon

WMB115N15HG4

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN50

ПОКАЗАТЬ ЕЩЁ

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