All MOSFET. WMB119N10LG2 Datasheet

 

WMB119N10LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB119N10LG2
   Marking Code: B119N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN5060-8L

 WMB119N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB119N10LG2 Datasheet (PDF)

 ..1. Size:519K  way-on
 wmb119n10lg2.pdf

WMB119N10LG2 WMB119N10LG2

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50

 6.1. Size:640K  way-on
 wmb119n12lg4.pdf

WMB119N10LG2 WMB119N10LG2

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 6.2. Size:636K  way-on
 wmb119n12hg4.pdf

WMB119N10LG2 WMB119N10LG2

WMB119N12HG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 9.1. Size:975K  way-on
 wmb115n15lg4.pdf

WMB119N10LG2 WMB119N10LG2

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.2. Size:443K  way-on
 wmb115n15hg4.pdf

WMB119N10LG2 WMB119N10LG2

WMB115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top