All MOSFET. WMB119N10LG2 Datasheet

 

WMB119N10LG2 Datasheet and Replacement


   Type Designator: WMB119N10LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN5060-8L
 

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WMB119N10LG2 Datasheet (PDF)

 ..1. Size:519K  way-on
 wmb119n10lg2.pdf pdf_icon

WMB119N10LG2

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50

 6.1. Size:640K  way-on
 wmb119n12lg4.pdf pdf_icon

WMB119N10LG2

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 6.2. Size:636K  way-on
 wmb119n12hg4.pdf pdf_icon

WMB119N10LG2

WMB119N12HG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 9.1. Size:975K  way-on
 wmb115n15lg4.pdf pdf_icon

WMB119N10LG2

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

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Datasheet: WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , 75N75 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 .

History: KF3N50DZ | SMIRF8N65T1TL | R5009ANX | SSG4542C | NTMFS5C468NLT1G | FTK35N03PDFN56 | LSGN06R098W3

Keywords - WMB119N10LG2 MOSFET datasheet

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