WMB119N10LG2 - описание и поиск аналогов

 

WMB119N10LG2. Аналоги и основные параметры

Наименование производителя: WMB119N10LG2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3 ns

Cossⓘ - Выходная емкость: 210 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm

Тип корпуса: PDFN5060-8L

Аналог (замена) для WMB119N10LG2

- подборⓘ MOSFET транзистора по параметрам

 

WMB119N10LG2 даташит

 ..1. Size:519K  way-on
 wmb119n10lg2.pdf pdf_icon

WMB119N10LG2

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN50

 6.1. Size:640K  way-on
 wmb119n12lg4.pdf pdf_icon

WMB119N10LG2

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB119N12LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 6.2. Size:636K  way-on
 wmb119n12hg4.pdf pdf_icon

WMB119N10LG2

WMB119N12HG4 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB119N12HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 9.1. Size:975K  way-on
 wmb115n15lg4.pdf pdf_icon

WMB119N10LG2

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB115N15LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , 10N65 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 .

History: SSS1N60A

 

 

 


 
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