All MOSFET. WMB120P06TS Datasheet

 

WMB120P06TS Datasheet and Replacement


   Type Designator: WMB120P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 168.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 910 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFN5060-8L
 

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WMB120P06TS Datasheet (PDF)

 ..1. Size:620K  way-on
 wmb120p06ts.pdf pdf_icon

WMB120P06TS

WMB120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and GsssssGyet maintain superior switching performance. sFeatures PDFN5060-8L V = -60V, I = -120A DS DR

 9.1. Size:649K  way-on
 wmb128n10t2.pdf pdf_icon

WMB120P06TS

WMB128N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB128N10T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 128A DS DR

 9.2. Size:536K  way-on
 wmb129n10t2.pdf pdf_icon

WMB120P06TS

WMB129N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB129N10T2 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 129ASilicon Limited DS DR

Datasheet: WMB100N07TS , WMB100P03TS , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , IRFZ46N , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 .

History: IRFH8334 | CS4N70FA9D | NCE0260P

Keywords - WMB120P06TS MOSFET datasheet

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