WMB120P06TS Specs and Replacement
Type Designator: WMB120P06TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 168.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 910 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PDFN5060-8L
WMB120P06TS substitution
- MOSFET ⓘ Cross-Reference Search
WMB120P06TS datasheet
wmb120p06ts.pdf
WMB120P06TS 60V P-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and G ss s ss G yet maintain superior switching performance. s Features PDFN5060-8L V = -60V, I = -120A DS D R ... See More ⇒
wmb128n10t2.pdf
WMB128N10T2 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMB128N10T2 uses advanced power trench technology that has DD D D D been especially tailored to minimize the on-state resistance and G yet maintain superior switching performance. ss s ss G s Features PDFN5060-8L V = 100 V, I = 128A DS D R ... See More ⇒
wmb129n10t2.pdf
WMB129N10T2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB129N10T2 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and G yet maintain superior switching performance. ss s ss G s Features PDFN5060-8L V = 100 V, I = 129A Silicon Limited DS D R ... See More ⇒
Detailed specifications: WMB100N07TS, WMB100P03TS, WMB108N03T1, WMB115N15HG4, WMB115N15LG4, WMB119N10LG2, WMB119N12HG4, WMB119N12LG4, SI2302, WMB129N10T2, WMB140NV6LG4, WMB150N03TS, WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, WMB240P10HG4
Keywords - WMB120P06TS MOSFET specs
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