All MOSFET. WMB26DN06TS Datasheet

 

WMB26DN06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB26DN06TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25.8 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: PDFN5060-8L

 WMB26DN06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB26DN06TS Datasheet (PDF)

 ..1. Size:629K  way-on
 wmb26dn06ts.pdf

WMB26DN06TS WMB26DN06TS

WMB26DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB26DN06TS uses advanced power trench technology that has S1been especially tailored to minimize the on-state resistance and yet G1G2S2S2G1G2maintain superior switching performance. S1PDFN5060-8LFeatures V = 60V, I = 26A DS D R

 9.1. Size:644K  way-on
 wmb26n06ts.pdf

WMB26DN06TS WMB26DN06TS

WMB26N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB26N06TS uses advanced power trench technology that has DD Dbeen especially tailored to minimize the on-state resistance and yet Gssmaintain superior switching performance. sssGsFeatures PDFN5060-8L V = 60V, I = 26A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP10NB50FP | HUFA76429S3ST | MMP6965

 

 
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