All MOSFET. WMB26DN06TS Datasheet

 

WMB26DN06TS Datasheet and Replacement


   Type Designator: WMB26DN06TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.8 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: PDFN5060-8L
 

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WMB26DN06TS Datasheet (PDF)

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WMB26DN06TS

WMB26DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB26DN06TS uses advanced power trench technology that has S1been especially tailored to minimize the on-state resistance and yet G1G2S2S2G1G2maintain superior switching performance. S1PDFN5060-8LFeatures V = 60V, I = 26A DS D R

 9.1. Size:644K  way-on
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WMB26DN06TS

WMB26N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB26N06TS uses advanced power trench technology that has DD Dbeen especially tailored to minimize the on-state resistance and yet Gssmaintain superior switching performance. sssGsFeatures PDFN5060-8L V = 60V, I = 26A DS DR

Datasheet: WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , K2611 , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS .

History: SSM6N7002KFU | PHB160NQ08T

Keywords - WMB26DN06TS MOSFET datasheet

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