WMB46N03T1 Specs and Replacement
Type Designator: WMB46N03T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5060-8L
WMB46N03T1 substitution
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WMB46N03T1 datasheet
wmb46n03t1.pdf
WMB46N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB46N03T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and G yet maintain superior switching performance. ss ss s G s Features PDFN5060-8L V = 30V, I = 46A DS D R ... See More ⇒
Detailed specifications: WMB240P10HG4, WMB26DN06TS, WMB26N06TS, WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS, 7N60, WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2, WMB56N04T1, WMB58N03T1, WMB60P02TS, WMB60P03TA
Keywords - WMB46N03T1 MOSFET specs
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History: WMB40N04TS
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