WMB46N03T1 Datasheet and Replacement
Type Designator: WMB46N03T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5060-8L
WMB46N03T1 substitution
WMB46N03T1 Datasheet (PDF)
wmb46n03t1.pdf

WMB46N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DWMB46N03T1 uses advanced power trench technology that has D DDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 30V, I = 46A DS DR
Datasheet: WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , IRF830 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS , WMB60P03TA .
Keywords - WMB46N03T1 MOSFET datasheet
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History: STM9930A | TPC8050-H



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