All MOSFET. WMB46N03T1 Datasheet

 

WMB46N03T1 Datasheet and Replacement


   Type Designator: WMB46N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFN5060-8L
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WMB46N03T1 Datasheet (PDF)

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WMB46N03T1

WMB46N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DWMB46N03T1 uses advanced power trench technology that has D DDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 30V, I = 46A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQB2P40TM | LKK47-06C5 | TSM4424CS | SSF1530 | FDC3535 | IRFB3004GPBF | BRCS200P03DP

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