All MOSFET. WMB50P04TS Datasheet

 

WMB50P04TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB50P04TS
   Marking Code: B50P04S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN5060-8L

 WMB50P04TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB50P04TS Datasheet (PDF)

 ..1. Size:620K  way-on
 wmb50p04ts.pdf

WMB50P04TS WMB50P04TS

WMB50P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DWMB50P04TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures V = - 40V, I = - 50A DS D PDFN5060-8LR

 7.1. Size:622K  way-on
 wmb50p03ts.pdf

WMB50P04TS WMB50P04TS

WMB50P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB50P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -50A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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