WMB50P04TS Specs and Replacement
Type Designator: WMB50P04TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: PDFN5060-8L
WMB50P04TS substitution
- MOSFET ⓘ Cross-Reference Search
WMB50P04TS datasheet
wmb50p04ts.pdf
WMB50P04TS 40V P-Channel Enhancement Mode Power MOSFET Description D D WMB50P04TS uses advanced power trench technology that has D DD D D D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. ss s ss G s Features V = - 40V, I = - 50A DS D PDFN5060-8L R ... See More ⇒
wmb50p03ts.pdf
WMB50P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMB50P03TS uses advanced power trench technology that has D D D D D D D D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. ss s ss G s Features PDFN5060-8L V = -30V, I = -50A DS D R ... See More ⇒
Detailed specifications: WMB26N06TS, WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, IRFZ46N, WMB510N15HG2, WMB52N03T2, WMB56N04T1, WMB58N03T1, WMB60P02TS, WMB60P03TA, WMB690N15HG2, WMB70N04T1
Keywords - WMB50P04TS MOSFET specs
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