All MOSFET. WMB50P04TS Datasheet

 

WMB50P04TS Datasheet and Replacement


   Type Designator: WMB50P04TS
   Marking Code: B50P04S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 28 nC
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN5060-8L
 

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WMB50P04TS Datasheet (PDF)

 ..1. Size:620K  way-on
 wmb50p04ts.pdf pdf_icon

WMB50P04TS

WMB50P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DWMB50P04TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures V = - 40V, I = - 50A DS D PDFN5060-8LR

 7.1. Size:622K  way-on
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WMB50P04TS

WMB50P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB50P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -50A DS DR

Datasheet: WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS , IRFZ46N , WMB510N15HG2 , WMB52N03T2 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS , WMB60P03TA , WMB690N15HG2 , WMB70N04T1 .

History: DMN3007LSS

Keywords - WMB50P04TS MOSFET datasheet

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