All MOSFET. WMB510N15HG2 Datasheet

 

WMB510N15HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB510N15HG2
   Marking Code: B510N15H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: PDFN5060-8L

 WMB510N15HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB510N15HG2 Datasheet (PDF)

 ..1. Size:638K  way-on
 wmb510n15hg2.pdf

WMB510N15HG2 WMB510N15HG2

WMB510N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB510N15HG2 uses Wayon's 2nd generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching performance.. PDFN50

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