All MOSFET. WMB510N15HG2 Datasheet

 

WMB510N15HG2 Datasheet and Replacement


   Type Designator: WMB510N15HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: PDFN5060-8L
 

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WMB510N15HG2 Datasheet (PDF)

 ..1. Size:638K  way-on
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WMB510N15HG2

WMB510N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB510N15HG2 uses Wayon's 2nd generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching performance.. PDFN50

Datasheet: WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS , WMB50P04TS , IRF1405 , WMB52N03T2 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS , WMB60P03TA , WMB690N15HG2 , WMB70N04T1 , WMB70P02TS .

History: CEU05P03 | PJM2300NSA | CEB02N65A | CET4435A | CEU95P04 | NDP5060L | IRFH7921

Keywords - WMB510N15HG2 MOSFET datasheet

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