WMB510N15HG2 MOSFET Datasheet: N-Ch, 150V, 28A. Full specification with pinout and replacement list

WMB510N15HG2 Specs and Replacement

Type Designator: WMB510N15HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.8 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm

Package: PDFN5060-8L

WMB510N15HG2 substitution

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WMB510N15HG2 datasheet

..1. Size:638K way-on
wmb510n15hg2.pdf pdf_icon

WMB510N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB510N15HG2 uses Wayon's 2nd generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching performance.. PDFN50... See More ⇒

Detailed specifications: WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, IRF830, WMB52N03T2, WMB56N04T1, WMB58N03T1, WMB60P02TS, WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS