WML20N50D1 Datasheet and Replacement
Type Designator: WML20N50D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 52.5 nC
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 285 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220F
WML20N50D1 substitution
WML20N50D1 Datasheet (PDF)
wmj20n50d1 wmk20n50d1 wml20n50d1.pdf
WMJ20N50D1 WMK20N50D1 WML20N50D1500V 20A 0.22 N-ch Power MOSFETDescriptionTO-247 TO-220 TO-220FTABWMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction inon-resistance and ultra-low gate charge forapplications requiring high power density andhigh efficiency. And it is very robust and RoHScompliant.G GGD DDS SSFeatures V =550V@
wml20n70d1 wmk20n70d1.pdf
WML20N70D1 WMK20N70D1 700V 20A 0.42 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications TAB requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.42@V =10V
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