WMJ27N80D1 PDF and Equivalents Search

 

WMJ27N80D1 Specs and Replacement

Type Designator: WMJ27N80D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 650 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO247

WMJ27N80D1 substitution

- MOSFET ⓘ Cross-Reference Search

 

WMJ27N80D1 datasheet

 ..1. Size:1491K  way-on
 wmj27n80d1.pdf pdf_icon

WMJ27N80D1

WMJ27N80D1 800V 27A 0.28 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features Typ.R =0.28 @V =10V DS(on) GS 100% avalanch... See More ⇒

Detailed specifications: WMJ11N150D1, WMJ12N120D1, WMX12N120D1, WMJ18N90D1, WMJ20N50D1, WMK20N50D1, WML20N50D1, WMJ220N20HG3, IRFP260N, WMJ3N120D1, WMO3N120D1, WMJ40N50D1, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1, WMJ60N60EM

Keywords - WMJ27N80D1 MOSFET specs

 WMJ27N80D1 cross reference

 WMJ27N80D1 equivalent finder

 WMJ27N80D1 pdf lookup

 WMJ27N80D1 substitution

 WMJ27N80D1 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.