All MOSFET. WMJ27N80D1 Datasheet

 

WMJ27N80D1 Datasheet and Replacement


   Type Designator: WMJ27N80D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 650 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO247
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WMJ27N80D1 Datasheet (PDF)

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WMJ27N80D1

WMJ27N80D1 800V 27A 0.28 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayons 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features Typ.R =0.28@V =10V DS(on) GS 100% avalanch

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NCE30H11G | 2SK4096LS | WML11N80M3 | QM2417C1 | AUIRFP4110 | IPP80N06S2L-06 | UT8205A

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