All MOSFET. WMJ27N80D1 Datasheet

 

WMJ27N80D1 Datasheet and Replacement


   Type Designator: WMJ27N80D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 650 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO247
 

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WMJ27N80D1 Datasheet (PDF)

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WMJ27N80D1

WMJ27N80D1 800V 27A 0.28 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayons 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features Typ.R =0.28@V =10V DS(on) GS 100% avalanch

Datasheet: WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , 10N60 , WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM .

History: CRST049N08N | STP16NF06LFP

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