All MOSFET. WMJ4N150D1 Datasheet

 

WMJ4N150D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ4N150D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.2 Ohm
   Package: TO247

 WMJ4N150D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ4N150D1 Datasheet (PDF)

 ..1. Size:1527K  way-on
 wmj4n150d1 wmx4n150d1 wmk4n150d1.pdf

WMJ4N150D1 WMJ4N150D1

WMJ4N150D1 WMX4N150D1 WMK4N150D1 1500V 4A 5.4 N-ch Power MOSFET Description TO-220 TO-3PF TO-247 WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G D G G S D D S S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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