WMJ4N150D1 PDF and Equivalents Search

 

WMJ4N150D1 Specs and Replacement

Type Designator: WMJ4N150D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.2 Ohm

Package: TO247

WMJ4N150D1 substitution

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WMJ4N150D1 datasheet

 ..1. Size:1527K  way-on
 wmj4n150d1 wmx4n150d1 wmk4n150d1.pdf pdf_icon

WMJ4N150D1

WMJ4N150D1 WMX4N150D1 WMK4N150D1 1500V 4A 5.4 N-ch Power MOSFET Description TO-220 TO-3PF TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G D G G S D D S S ... See More ⇒

Detailed specifications: WMK20N50D1, WML20N50D1, WMJ220N20HG3, WMJ27N80D1, WMJ3N120D1, WMO3N120D1, WMJ40N50D1, WMPN40N50D1, AON6414A, WMX4N150D1, WMK4N150D1, WMJ60N60EM, WMJ69N30DMH, WMJ80N60C4, WMJ80N60F2, WMJ80N65C4, WMJ80N65F2

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