All MOSFET. WMJ4N150D1 Datasheet

 

WMJ4N150D1 Datasheet and Replacement


   Type Designator: WMJ4N150D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.2 Ohm
   Package: TO247
 

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WMJ4N150D1 Datasheet (PDF)

 ..1. Size:1527K  way-on
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WMJ4N150D1

WMJ4N150D1 WMX4N150D1 WMK4N150D1 1500V 4A 5.4 N-ch Power MOSFET Description TO-220 TO-3PF TO-247 WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G D G G S D D S S

Datasheet: WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , IRFB4110 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM , WMJ69N30DMH , WMJ80N60C4 , WMJ80N60F2 , WMJ80N65C4 , WMJ80N65F2 .

History: IRFR9014 | SMY50 | KF5N50DZ | SI7172DP

Keywords - WMJ4N150D1 MOSFET datasheet

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