All MOSFET. WMJ9N90D1B Datasheet

 

WMJ9N90D1B Datasheet and Replacement


   Type Designator: WMJ9N90D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 202 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO247
 

 WMJ9N90D1B substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMJ9N90D1B Datasheet (PDF)

 ..1. Size:1354K  way-on
 wmj9n90d1b wml9n90d1b.pdf pdf_icon

WMJ9N90D1B

WMJ9N90D1B WML9N90D1B900V 9A 0.88 N-ch Power MOSFETDescriptionTO-247 TO-220FWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is very GDGSDrobust and RoHS compliant.SFeatures Typ.R =0.88@V =10VDS(on) GS 100% av

 9.1. Size:1181K  way-on
 wmj9n150d1.pdf pdf_icon

WMJ9N90D1B

WMJ9N150D11500V 9A 2.9 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDSFeatures R =2.9@V =10VDS(on) GS 100% avalanche tested Pb-freeHa

Datasheet: WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 , WMJ99N60C4 , WMJ99N60F2 , WMJ9N150D1 , AO3400 , WML9N90D1B , WMK020N06HG4 , WMK023N08HGS , WMK028N08HGD , WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 .

History: SVD730T | MS5N100FD | WMJ10N105C2 | FTD36N06N | IRFR9214PBF | IRFPS40N60KPBF | SSM5G09TU

Keywords - WMJ9N90D1B MOSFET datasheet

 WMJ9N90D1B cross reference
 WMJ9N90D1B equivalent finder
 WMJ9N90D1B lookup
 WMJ9N90D1B substitution
 WMJ9N90D1B replacement

 

 
Back to Top

 


 
.