All MOSFET. WMJ9N90D1B Datasheet

 

WMJ9N90D1B MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ9N90D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 65.4 nC
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 202 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO247

 WMJ9N90D1B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ9N90D1B Datasheet (PDF)

 ..1. Size:1354K  way-on
 wmj9n90d1b wml9n90d1b.pdf

WMJ9N90D1B WMJ9N90D1B

WMJ9N90D1B WML9N90D1B900V 9A 0.88 N-ch Power MOSFETDescriptionTO-247 TO-220FWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is very GDGSDrobust and RoHS compliant.SFeatures Typ.R =0.88@V =10VDS(on) GS 100% av

 9.1. Size:1181K  way-on
 wmj9n150d1.pdf

WMJ9N90D1B WMJ9N90D1B

WMJ9N150D11500V 9A 2.9 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDSFeatures R =2.9@V =10VDS(on) GS 100% avalanche tested Pb-freeHa

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: APT1204R7BFLLG

 

 
Back to Top