All MOSFET. WML9N90D1B Datasheet

 

WML9N90D1B Datasheet and Replacement


   Type Designator: WML9N90D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 202 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
 

 WML9N90D1B substitution

   - MOSFET ⓘ Cross-Reference Search

 

WML9N90D1B Datasheet (PDF)

 ..1. Size:1354K  way-on
 wmj9n90d1b wml9n90d1b.pdf pdf_icon

WML9N90D1B

WMJ9N90D1B WML9N90D1B900V 9A 0.88 N-ch Power MOSFETDescriptionTO-247 TO-220FWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is very GDGSDrobust and RoHS compliant.SFeatures Typ.R =0.88@V =10VDS(on) GS 100% av

 9.1. Size:1621K  way-on
 wmk9n50d1b wml9n50d1b wmo9n50d1b.pdf pdf_icon

WML9N90D1B

WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S

Datasheet: WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 , WMJ99N60C4 , WMJ99N60F2 , WMJ9N150D1 , WMJ9N90D1B , SPP20N60C3 , WMK020N06HG4 , WMK023N08HGS , WMK028N08HGD , WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS .

History: HFW5N60S | STB40NF20 | NTMS4700NR2 | HD60N75 | WMK08N70EM | SML40L57 | SQM100N04-3M5

Keywords - WML9N90D1B MOSFET datasheet

 WML9N90D1B cross reference
 WML9N90D1B equivalent finder
 WML9N90D1B lookup
 WML9N90D1B substitution
 WML9N90D1B replacement

 

 
Back to Top

 


 
.