All MOSFET. WMK028N10HG2 Datasheet

 

WMK028N10HG2 Datasheet and Replacement


   Type Designator: WMK028N10HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 245 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 98 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO220
 

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WMK028N10HG2 Datasheet (PDF)

 ..1. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK028N10HG2

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

 3.1. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK028N10HG2

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

 7.1. Size:620K  way-on
 wmk028n08hgd.pdf pdf_icon

WMK028N10HG2

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 80V, I = 167A

 9.1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK028N10HG2

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS

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Datasheet: WMJ99N60C4 , WMJ99N60F2 , WMJ9N150D1 , WMJ9N90D1B , WML9N90D1B , WMK020N06HG4 , WMK023N08HGS , WMK028N08HGD , IRF9540N , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , WMK040N08HGS , WMK043N10HGS , WMK043N10LGS .

History: MMBFJ202

Keywords - WMK028N10HG2 MOSFET datasheet

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