Справочник MOSFET. WMK028N10HG2

 

WMK028N10HG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK028N10HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 278 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 245 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 1190 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для WMK028N10HG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMK028N10HG2 Datasheet (PDF)

 ..1. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK028N10HG2

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

 3.1. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK028N10HG2

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

 7.1. Size:620K  way-on
 wmk028n08hgd.pdf pdf_icon

WMK028N10HG2

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 80V, I = 167A

 9.1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK028N10HG2

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS

ПОКАЗАТЬ ЕЩЁ

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History: KTK597E | FQPF12P20XDTU | FDMS8333L | WMM26N60C4 | SRM10N65TF | WMS13P04T1 | SIS402DN

 

 
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