STK103 Datasheet and Replacement
Type Designator: STK103
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: SOT89
STK103 substitution
STK103 Datasheet (PDF)
stk103.pdf

GrerrPPrPrProSTK103aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.210 @ VGS=10VSuface Mount Package.100V 2.0A312 @ VGS=4.5VDDGSDSOT-89GS(TA=25C unless otherwise noted)ABSOLUTE MAXI
Datasheet: STK900 , FDP8874 , STK801 , FDP8876 , STK600 , FDP8880 , STK400 , FDP8896 , K2611 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT , FDPF10N60NZ , STM4472 , FDPF10N60ZUT , STG8209 , FDPF12N50FT .
History: HFP50N06V
Keywords - STK103 MOSFET datasheet
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History: HFP50N06V



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