WMK060N08HG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK060N08HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 86.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
WMK060N08HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK060N08HG2 Datasheet (PDF)
wmk060n08hg2.pdf
WMK060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N08HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 95A
wmk060n10lgs.pdf
WMK060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =
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WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80MWMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET0V 1.8 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
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