Справочник MOSFET. WMK060N08HG2

 

WMK060N08HG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK060N08HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 86.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 41 nC
   tr ⓘ - Время нарастания: 6.5 ns
   Cossⓘ - Выходная емкость: 470 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для WMK060N08HG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMK060N08HG2 Datasheet (PDF)

 ..1. Size:507K  way-on
wmk060n08hg2.pdfpdf_icon

WMK060N08HG2

WMK060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N08HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 95A

 7.1. Size:534K  way-on
wmk060n10lgs.pdfpdf_icon

WMK060N08HG2

WMK060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 9.1. Size:673K  way-on
wml06n80m3 wmn06n80m3 wmm06n80m3 wmo06n80m3 wmp06n80m3 wmk06n80m3.pdfpdf_icon

WMK060N08HG2

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80MWMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET0V 1.8 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

Другие MOSFET... WMK048NV6LG4 , WMK053N10HGS , WMK053NV8HGS , WMK05N70MM , WMO05N70MM , WMN05N70MM , WMM05N70MM , WMP05N70MM , 10N65 , WMK060N10LGS , WMK071N15HG2 , WMK072N12HG2 , WMK072N12LG2 , WMK099N10HGS , WMK099N10LG2 , WMK099N10LGS , WMK100N07TS .

History: SM1A23NSU | SQM100N04-2M7 | HY1606P | NCE020N30K | SFF840 | MTB02N03H8 | IRF7453PBF

 

 
Back to Top

 


 
.