WMK072N12HG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK072N12HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 225 W
Maximum Drain-Source Voltage |Vds|: 120 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 125 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 43 nC
Rise Time (tr): 7.8 nS
Drain-Source Capacitance (Cd): 530 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0072 Ohm
Package: TO220
WMK072N12HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK072N12HG2 Datasheet (PDF)
wmk072n12hg2.pdf
WMK072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK072N12HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 120V, I =
wmk072n12lg2.pdf
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wmk071n15hg2.pdf
WMK071N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDFeatures GTO-220 V = 150V, I = 1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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