Справочник MOSFET. WMK072N12HG2

 

WMK072N12HG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK072N12HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 225 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 125 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7.8 ns
   Cossⓘ - Выходная емкость: 530 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для WMK072N12HG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMK072N12HG2 Datasheet (PDF)

 ..1. Size:510K  way-on
 wmk072n12hg2.pdf pdf_icon

WMK072N12HG2

WMK072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK072N12HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 120V, I =

 5.1. Size:600K  way-on
 wmk072n12lg2.pdf pdf_icon

WMK072N12HG2

WMK072N12LG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK072N12LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 120V, I =

 9.1. Size:731K  way-on
 wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WMK072N12HG2

WM 2, WMN07N MM07N100CML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100CMO07N100C N100C2, WM C2 1000V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low

 9.2. Size:679K  way-on
 wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf pdf_icon

WMK072N12HG2

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80MWMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET0V 1.6 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMK05N70MM , WMO05N70MM , WMN05N70MM , WMM05N70MM , WMP05N70MM , WMK060N08HG2 , WMK060N10LGS , WMK071N15HG2 , 5N65 , WMK072N12LG2 , WMK099N10HGS , WMK099N10LG2 , WMK099N10LGS , WMK100N07TS , WMK100N10TS , WMK110N20HG2 , WMK115N15HG4 .

 

 
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