All MOSFET. WMK100N10TS Datasheet

 

WMK100N10TS Datasheet and Replacement


   Type Designator: WMK100N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 258.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 65 nC
   tr ⓘ - Rise Time: 16.2 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

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WMK100N10TS Datasheet (PDF)

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WMK100N10TS

WMK100N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK100N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 100V, I = 100A DS D TO-220R

 7.1. Size:536K  way-on
 wmk100n07ts.pdf pdf_icon

WMK100N10TS

WMK100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionWMK100N07TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 70V, I = 100A DS DR

 9.1. Size:1354K  way-on
 wml10n65d1b wmk10n65d1b.pdf pdf_icon

WMK100N10TS

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

 9.2. Size:671K  way-on
 wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WMK100N10TS

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

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History: 2N6849

Keywords - WMK100N10TS MOSFET datasheet

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