WMK100N10TS - аналоги и даташиты транзистора

 

WMK100N10TS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMK100N10TS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 258.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 16.2 ns
   Cossⓘ - Выходная емкость: 455 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для WMK100N10TS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMK100N10TS Datasheet (PDF)

 ..1. Size:599K  way-on
 wmk100n10ts.pdf pdf_icon

WMK100N10TS

WMK100N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK100N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 100V, I = 100A DS D TO-220R

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 wmk100n07ts.pdf pdf_icon

WMK100N10TS

WMK100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionWMK100N07TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 70V, I = 100A DS DR

 9.1. Size:1354K  way-on
 wml10n65d1b wmk10n65d1b.pdf pdf_icon

WMK100N10TS

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

 9.2. Size:671K  way-on
 wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WMK100N10TS

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMK060N10LGS , WMK071N15HG2 , WMK072N12HG2 , WMK072N12LG2 , WMK099N10HGS , WMK099N10LG2 , WMK099N10LGS , WMK100N07TS , 75N75 , WMK110N20HG2 , WMK115N15HG4 , WMK119N12HG4 , WMK119N12LG4 , WMK120N04TS , WMK13N50D1B , WML13N50D1B , WMK15N50D1B .

History: HFB1N60S | AP09T10GH-HF | AP09N70R-A-HF

 

 
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