WMK110N20HG2 Specs and Replacement
Type Designator: WMK110N20HG2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 347.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 125 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23.8 nS
Cossⓘ - Output Capacitance: 438 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO220
WMK110N20HG2 substitution
- MOSFET ⓘ Cross-Reference Search
WMK110N20HG2 datasheet
wmk110n20hg2.pdf
WMK110N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WMK110N20HG2 uses Wayon's 2nd generation powe trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 200V, I = 1... See More ⇒
wmk119n12hg4.pdf
WMK119N12HG4 120V N-Channel Enhancement Mode Power MOSFET Description WMK119N12HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 120V, I = ... See More ⇒
wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf
WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80M WMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo... See More ⇒
wmk119n12lg4.pdf
WMK119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description WMK119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 120V, I = ... See More ⇒
Detailed specifications: WMK071N15HG2, WMK072N12HG2, WMK072N12LG2, WMK099N10HGS, WMK099N10LG2, WMK099N10LGS, WMK100N07TS, WMK100N10TS, 20N50, WMK115N15HG4, WMK119N12HG4, WMK119N12LG4, WMK120N04TS, WMK13N50D1B, WML13N50D1B, WMK15N50D1B, WML15N50D1B
Keywords - WMK110N20HG2 MOSFET specs
WMK110N20HG2 cross reference
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WMK110N20HG2 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMK037N10HGS | WMK043N10HGS
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