WMK110N20HG2 PDF and Equivalents Search

 

WMK110N20HG2 Specs and Replacement

Type Designator: WMK110N20HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.8 nS

Cossⓘ - Output Capacitance: 438 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO220

WMK110N20HG2 substitution

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WMK110N20HG2 datasheet

 ..1. Size:619K  way-on
wmk110n20hg2.pdf pdf_icon

WMK110N20HG2

WMK110N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WMK110N20HG2 uses Wayon's 2nd generation powe trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 200V, I = 1... See More ⇒

 9.1. Size:965K  way-on
wmk119n12hg4.pdf pdf_icon

WMK110N20HG2

WMK119N12HG4 120V N-Channel Enhancement Mode Power MOSFET Description WMK119N12HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 120V, I = ... See More ⇒

 9.2. Size:674K  way-on
wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf pdf_icon

WMK110N20HG2

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80M WMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo... See More ⇒

 9.3. Size:970K  way-on
wmk119n12lg4.pdf pdf_icon

WMK110N20HG2

WMK119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description WMK119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 120V, I = ... See More ⇒

Detailed specifications: WMK071N15HG2, WMK072N12HG2, WMK072N12LG2, WMK099N10HGS, WMK099N10LG2, WMK099N10LGS, WMK100N07TS, WMK100N10TS, 20N50, WMK115N15HG4, WMK119N12HG4, WMK119N12LG4, WMK120N04TS, WMK13N50D1B, WML13N50D1B, WMK15N50D1B, WML15N50D1B

Keywords - WMK110N20HG2 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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