WMK110N20HG2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMK110N20HG2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 347.2 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 125 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 73.8 nC
Время нарастания (tr): 23.8 ns
Выходная емкость (Cd): 438 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK110N20HG2
WMK110N20HG2 Datasheet (PDF)
wmk110n20hg2.pdf
WMK110N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMK110N20HG2 uses Wayon's 2nd generation powe trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 200V, I = 1
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WMK115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 150V, I =
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